SUP70040E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
auf Bestellung 460 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.05 EUR |
10+ | 5.94 EUR |
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Technische Details SUP70040E-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V.
Weitere Produktangebote SUP70040E-GE3 nach Preis ab 3.56 EUR bis 7.1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SUP70040E-GE3 | Hersteller : Vishay Semiconductors | MOSFET 100V Vds 20V Vgs TO-220 |
auf Bestellung 610 Stücke: Lieferzeit 14-28 Tag (e) |
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SUP70040E-GE3 | Hersteller : VISHAY |
Description: VISHAY - SUP70040E-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0032 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0032ohm |
auf Bestellung 886 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP70040E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP70040E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP70040E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP70040E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70040E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |