SUP80090E-GE3 Vishay Semiconductors
auf Bestellung 141 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.33 EUR |
| 10+ | 6.19 EUR |
| 25+ | 6.01 EUR |
| 100+ | 5.02 EUR |
| 250+ | 4.94 EUR |
| 500+ | 4.58 EUR |
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Technische Details SUP80090E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 150V 128A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 128A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V.
Weitere Produktangebote SUP80090E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SUP80090E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP80090E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP80090E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain current: 74A On-state resistance: 9.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Drain-source voltage: 150V Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP80090E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 128A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V |
Produkt ist nicht verfügbar |
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SUP80090E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain current: 74A On-state resistance: 9.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Drain-source voltage: 150V Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |