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SUP85N03-3M6P-GE3

SUP85N03-3M6P-GE3 Vishay


sup85n03.pdf Hersteller: Vishay
Trans MOSFET N-CH 30V 85A 3-Pin(3+Tab) TO-220AB
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Technische Details SUP85N03-3M6P-GE3 Vishay

Description: MOSFET N-CH 30V 85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V, Power Dissipation (Max): 3.1W (Ta), 78.1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3535 pF @ 15 V.

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SUP85N03-3M6P-GE3 SUP85N03-3M6P-GE3 Hersteller : Vishay Siliconix sup85n03.pdf Description: MOSFET N-CH 30V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3535 pF @ 15 V
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SUP85N03-3M6P-GE3 SUP85N03-3M6P-GE3 Hersteller : Vishay Semiconductors sup85n03-1764332.pdf MOSFET 30 Volts 85 Amps 78.1 Watts
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