Suchergebnisse für "T30N12" : 20
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SCT30N120 | STMicroelectronics |
 MOSFET 1200V silicon carbide MOSFET |
auf Bestellung 760 Stücke: Lieferzeit 301-315 Tag (e) |
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SCT30N120H | STMicroelectronics |
MOSFET Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm |
auf Bestellung 999 Stücke: Lieferzeit 329-343 Tag (e) |
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SCT30N120 Produktcode: 167630 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IXGT30N120B3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns |
Produkt ist nicht verfügbar |
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IXGT30N120B3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGT30N120B3D1 | Littelfuse |
Trans IGBT Chip 1200V 50A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXGT30N120B3D1 | IXYS |
IGBT Transistors 30 Amps 1200V |
Produkt ist nicht verfügbar |
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| IXGT30N120BD1 | IXYS | IGBT Transistors 50 Amps 1200V 3.5 V Rds |
Produkt ist nicht verfügbar |
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SCT30N120 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Technology: SiC; SiCFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ Gate-source voltage: -10...25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube |
Produkt ist nicht verfügbar |
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SCT30N120 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Technology: SiC; SiCFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ Gate-source voltage: -10...25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT30N120 | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCT30N120 | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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SCT30N120D2 | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCT30N120D2 | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCT30N120H | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SCT30N120H | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT30N120H | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCT30N120H | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
| SCT30N120 |
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Hersteller: STMicroelectronics
MOSFET 1200V silicon carbide MOSFET
MOSFET 1200V silicon carbide MOSFET
auf Bestellung 760 Stücke:
Lieferzeit 301-315 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 57.02 EUR |
| 10+ | 50.65 EUR |
| 25+ | 47.27 EUR |
| 50+ | 45.79 EUR |
| 100+ | 44.33 EUR |
| 250+ | 41.34 EUR |
| 600+ | 38.04 EUR |
| SCT30N120H |
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Hersteller: STMicroelectronics
MOSFET Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
MOSFET Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
auf Bestellung 999 Stücke:
Lieferzeit 329-343 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 56.47 EUR |
| 10+ | 52.08 EUR |
| 25+ | 49.76 EUR |
| 50+ | 49.74 EUR |
| 100+ | 44.49 EUR |
| 250+ | 42.43 EUR |
| 500+ | 40.38 EUR |
| IXGT30N120B3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
| IXGT30N120B3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IXGT30N120B3D1 |
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Hersteller: Littelfuse
Trans IGBT Chip 1200V 50A 3-Pin(2+Tab) TO-268
Trans IGBT Chip 1200V 50A 3-Pin(2+Tab) TO-268
Produkt ist nicht verfügbar
| SCT30N120 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Produkt ist nicht verfügbar
| SCT30N120 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SCT30N120 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Produkt ist nicht verfügbar
| SCT30N120 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Produkt ist nicht verfügbar
| SCT30N120D2 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Produkt ist nicht verfügbar
| SCT30N120D2 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
Produkt ist nicht verfügbar
| SCT30N120H |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT30N120H |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SCT30N120H |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar
| SCT30N120H |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar