Suchergebnisse für "T50N12" : 7
Art der Ansicht :
Mindestbestellmenge: 2
Mindestbestellmenge: 2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SCT50N120 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W Type of transistor: N-MOSFET Technology: SiC; SiCFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 50A Pulsed drain current: 130A Power dissipation: 318W Case: HIP247™ Gate-source voltage: -10...25V On-state resistance: 70mΩ Mounting: THT Gate charge: 122nC Kind of package: tube |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT50N120 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W Type of transistor: N-MOSFET Technology: SiC; SiCFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 50A Pulsed drain current: 130A Power dissipation: 318W Case: HIP247™ Gate-source voltage: -10...25V On-state resistance: 70mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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SCT50N120 | STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) |
auf Bestellung 585 Stücke: Lieferzeit 301-315 Tag (e) |
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SCT50N120 | STMicroelectronics | Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
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SCT50N120 | STMicroelectronics | Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
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SCT50N120 | STMicroelectronics |
Description: SICFET N-CH 1200V 65A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V Power Dissipation (Max): 318W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V |
Produkt ist nicht verfügbar |
SCT50N120 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 50A
Pulsed drain current: 130A
Power dissipation: 318W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 50A
Pulsed drain current: 130A
Power dissipation: 318W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 49.59 EUR |
3+ | 47.68 EUR |
SCT50N120 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 50A
Pulsed drain current: 130A
Power dissipation: 318W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 50A
Pulsed drain current: 130A
Power dissipation: 318W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 49.59 EUR |
3+ | 47.68 EUR |
SCT50N120 |
Hersteller: STMicroelectronics
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C)
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C)
auf Bestellung 585 Stücke:
Lieferzeit 301-315 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 70.69 EUR |
25+ | 58.63 EUR |
50+ | 58.6 EUR |
100+ | 54.96 EUR |
600+ | 47.37 EUR |
SCT50N120 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
Produkt ist nicht verfügbar
SCT50N120 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
Produkt ist nicht verfügbar
SCT50N120 |
Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 65A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
Power Dissipation (Max): 318W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
Description: SICFET N-CH 1200V 65A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
Power Dissipation (Max): 318W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
Produkt ist nicht verfügbar