TESD5V0L1UC RJG

TESD5V0L1UC RJG Taiwan Semiconductor Corporation


pdf.php?pn=TESD5V0L1UC Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 15VC DFN1006L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 155°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.12 EUR
10000+ 0.1 EUR
Mindestbestellmenge: 5000
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Technische Details TESD5V0L1UC RJG Taiwan Semiconductor Corporation

Description: TVS DIODE 5VWM 15VC DFN1006L, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 155°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 2pF @ 1MHz, Current - Peak Pulse (10/1000µs): 3A (8/20µs), Voltage - Reverse Standoff (Typ): 5V (Max), Supplier Device Package: DFN1006L, Bidirectional Channels: 1, Voltage - Breakdown (Min): 6V, Voltage - Clamping (Max) @ Ipp: 15V, Power - Peak Pulse: 100W, Power Line Protection: No, Part Status: Active.

Weitere Produktangebote TESD5V0L1UC RJG nach Preis ab 0.13 EUR bis 1.17 EUR

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TESD5V0L1UC RJG TESD5V0L1UC RJG Hersteller : Taiwan Semiconductor Corporation pdf.php?pn=TESD5V0L1UC Description: TVS DIODE 5VWM 15VC DFN1006L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 155°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
auf Bestellung 16670 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
35+0.75 EUR
50+ 0.53 EUR
101+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 35
TESD5V0L1UC RJG TESD5V0L1UC RJG Hersteller : Taiwan Semiconductor TESD5V0L1UC_E2007-1918537.pdf ESD Suppressors / TVS Diodes 5V, 100W, 2pF, ESD Protection Diode & Array
auf Bestellung 20000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
45+1.17 EUR
58+ 0.9 EUR
100+ 0.56 EUR
500+ 0.38 EUR
Mindestbestellmenge: 45
TESD5V0L1UC RJG Hersteller : TAIWAN SEMICONDUCTOR pdf.php?pn=TESD5V0L1UC Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 100W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
TESD5V0L1UC RJG Hersteller : TAIWAN SEMICONDUCTOR pdf.php?pn=TESD5V0L1UC Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 100W
Produkt ist nicht verfügbar