TP0202K-T1-GE3
Hersteller: auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details TP0202K-T1-GE3
Description: MOSFET P-CH 30V 385MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 385mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V.
Weitere Produktangebote TP0202K-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TP0202K-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 0.385A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TP0202K-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 385MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V |
Produkt ist nicht verfügbar |