TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
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Technische Details TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U, Case: PDFN56U, Mounting: SMD, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 3.3mΩ, Power dissipation: 36W, Gate charge: 79nC, Polarisation: unipolar, Drain current: 21A, Kind of channel: enhanced, Drain-source voltage: 40V, Anzahl je Verpackung: 1 Stücke.
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TSM033NB04LCR RLG | Hersteller : Taiwan Semiconductor | MOSFET 40V 121A Single N-Chan Pwr MOSFET |
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TSM033NB04LCR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Case: PDFN56U Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 36W Gate charge: 79nC Polarisation: unipolar Drain current: 21A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |