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TSM045NB06CR RLG

TSM045NB06CR RLG Taiwan Semiconductor


tsm045nb06cr_b1804.pdf Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 104A 8-Pin PDFN EP T/R
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Technische Details TSM045NB06CR RLG Taiwan Semiconductor

Description: MOSFET N-CH 60V 16A/104A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, Power Dissipation (Max): 3.1W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V.

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TSM045NB06CR RLG Hersteller : TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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TSM045NB06CR RLG TSM045NB06CR RLG Hersteller : Taiwan Semiconductor Corporation TSMxxxNB0x_Newsletter.pdf Description: MOSFET N-CH 60V 16A/104A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V
Produkt ist nicht verfügbar
TSM045NB06CR RLG TSM045NB06CR RLG Hersteller : Taiwan Semiconductor Corporation TSMxxxNB0x_Newsletter.pdf Description: MOSFET N-CH 60V 16A/104A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V
Produkt ist nicht verfügbar
TSM045NB06CR RLG TSM045NB06CR RLG Hersteller : Taiwan Semiconductor TSM045NB06CR_B1804-1480619.pdf MOSFET 60V 104A 5mOhm N-Chan Pwr MOSFET
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TSM045NB06CR RLG Hersteller : TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
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