TSM045NB06CR RLG Taiwan Semiconductor
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Technische Details TSM045NB06CR RLG Taiwan Semiconductor
Description: MOSFET N-CH 60V 16A/104A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, Power Dissipation (Max): 3.1W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V.
Weitere Produktangebote TSM045NB06CR RLG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TSM045NB06CR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 104nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM045NB06CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V |
Produkt ist nicht verfügbar |
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TSM045NB06CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V |
Produkt ist nicht verfügbar |
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TSM045NB06CR RLG | Hersteller : Taiwan Semiconductor | MOSFET 60V 104A 5mOhm N-Chan Pwr MOSFET |
Produkt ist nicht verfügbar |
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TSM045NB06CR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 104nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |