TSM051N04LCP ROG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 96A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 96A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 16A, 10V
Power Dissipation (Max): 2.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2456 pF @ 20 V
Description: 40V, 96A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 96A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 16A, 10V
Power Dissipation (Max): 2.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2456 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.92 EUR |
| 5000+ | 0.88 EUR |
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Technische Details TSM051N04LCP ROG Taiwan Semiconductor Corporation
Description: 40V, 96A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 96A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 16A, 10V, Power Dissipation (Max): 2.6W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2456 pF @ 20 V.
Weitere Produktangebote TSM051N04LCP ROG nach Preis ab 0.98 EUR bis 5.36 EUR
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TSM051N04LCP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: 40V, 96A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 96A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 16A, 10V Power Dissipation (Max): 2.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2456 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM051N04LCP ROG | Hersteller : Taiwan Semiconductor | MOSFET 40V, 96A, Single N-Channel Power MOSFET |
auf Bestellung 4889 Stücke: Lieferzeit 14-28 Tag (e) |
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| TSM051N04LCP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Power dissipation: 18W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TSM051N04LCP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Power dissipation: 18W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |