TSM085P03CV RGG

TSM085P03CV RGG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 30V 64A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V
auf Bestellung 35000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.78 EUR
10000+ 0.72 EUR
25000+ 0.71 EUR
Mindestbestellmenge: 5000
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Technische Details TSM085P03CV RGG Taiwan Semiconductor Corporation

Description: MOSFET P-CH 30V 64A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V.

Weitere Produktangebote TSM085P03CV RGG nach Preis ab 0.75 EUR bis 2.16 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM085P03CV RGG TSM085P03CV RGG Hersteller : Taiwan Semiconductor MOSFET -30, -64, Single P-Channel
auf Bestellung 16486 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.15 EUR
28+ 1.92 EUR
100+ 1.89 EUR
25000+ 0.75 EUR
Mindestbestellmenge: 25
TSM085P03CV RGG TSM085P03CV RGG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET P-CH 30V 64A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V
auf Bestellung 51980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
14+ 1.87 EUR
100+ 1.3 EUR
500+ 1.08 EUR
1000+ 0.92 EUR
2000+ 0.82 EUR
Mindestbestellmenge: 13