TSM089N08LCR RLG

TSM089N08LCR RLG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 80V 67A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.03 EUR
5000+ 1.95 EUR
Mindestbestellmenge: 2500
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Technische Details TSM089N08LCR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 80V 67A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V.

Weitere Produktangebote TSM089N08LCR RLG nach Preis ab 2.04 EUR bis 4.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM089N08LCR RLG TSM089N08LCR RLG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET N-CH 80V 67A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
10+ 3.74 EUR
100+ 2.97 EUR
500+ 2.52 EUR
1000+ 2.13 EUR
Mindestbestellmenge: 6
TSM089N08LCR RLG TSM089N08LCR RLG Hersteller : Taiwan Semiconductor MOSFET 80V, 67A, Single N-Channel Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.52 EUR
14+ 3.74 EUR
100+ 2.96 EUR
250+ 2.76 EUR
500+ 2.49 EUR
1000+ 2.15 EUR
2500+ 2.04 EUR
Mindestbestellmenge: 12
TSM089N08LCR RLG TSM089N08LCR RLG Hersteller : Taiwan Semiconductor 11173215454829398tsm089n08lcr_a1608.pdf Trans MOSFET N-CH 80V 67A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
TSM089N08LCR RLG Hersteller : TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM089N08LCR RLG Hersteller : TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
Produkt ist nicht verfügbar