Suchergebnisse für "TSM10N60CZ" : 6
Art der Ansicht :
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TSM10N60CZ | Taiwan Semiconductor | MOSFET 600V 10Amp N channel Power Mosfet |
Produkt ist nicht verfügbar |
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TSM10N60CZ C0 | Taiwan Semiconductor |
 Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| TSM10N60CZ C0 | Taiwan Semiconductor |
LDO Voltage Regulators |
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TSM10N60CZ C0G | Taiwan Semiconductor |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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TSM10N60CZ C0G | Taiwan Semiconductor |
MOSFET 600V 10Amp N channel Power Mosfet |
Produkt ist nicht verfügbar |
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TSM10N60CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 10A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 25 V |
Produkt ist nicht verfügbar |
| TSM10N60CZ |
Hersteller: Taiwan Semiconductor
MOSFET 600V 10Amp N channel Power Mosfet
MOSFET 600V 10Amp N channel Power Mosfet
Produkt ist nicht verfügbar
| TSM10N60CZ C0 |
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Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
| TSM10N60CZ C0G |
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Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
| TSM10N60CZ C0G |
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Hersteller: Taiwan Semiconductor
MOSFET 600V 10Amp N channel Power Mosfet
MOSFET 600V 10Amp N channel Power Mosfet
Produkt ist nicht verfügbar
| TSM10N60CZ C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 25 V
Produkt ist nicht verfügbar