TSM110NB04DCR RLG

TSM110NB04DCR RLG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.18 EUR
5000+ 1.13 EUR
12500+ 1.07 EUR
Mindestbestellmenge: 2500
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Technische Details TSM110NB04DCR RLG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 40V 10A/48A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 48W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V, Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.

Weitere Produktangebote TSM110NB04DCR RLG nach Preis ab 1.26 EUR bis 2.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM110NB04DCR RLG TSM110NB04DCR RLG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 14882 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.86 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.54 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 10
TSM110NB04DCR RLG TSM110NB04DCR RLG Hersteller : Taiwan Semiconductor TSM110NB04DCR_A1908-1918722.pdf MOSFET Dual N-Chan Pwr MOSFET 40V 48A 11mu
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
TSM110NB04DCR RLG TSM110NB04DCR RLG Hersteller : Taiwan Semiconductor tsm110nb04dcr_a1908.pdf Trans MOSFET N-CH 40V 10A 8-Pin PDFN EP T/R
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TSM110NB04DCR RLG Hersteller : TAIWAN SEMICONDUCTOR TSM110NB04DCR-RLG Multi channel transistors
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