TSM13ND50CI

TSM13ND50CI Taiwan Semiconductor Corporation


TSM13ND50CI_A1804.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 13A ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.3A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 50 V
auf Bestellung 3853 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.27 EUR
10+ 8.63 EUR
100+ 6.98 EUR
500+ 6.2 EUR
1000+ 5.31 EUR
2000+ 5 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM13ND50CI Taiwan Semiconductor Corporation

Description: MOSFET N-CH 500V 13A ITO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 3.3A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: ITO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 50 V.