TSM1NB60CH C5G Taiwan Semiconductor
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Technische Details TSM1NB60CH C5G Taiwan Semiconductor
Description: MOSFET N-CHANNEL 600V 1A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V.
Weitere Produktangebote TSM1NB60CH C5G
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| TSM1NB60CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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TSM1NB60CH C5G | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 1A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V |
Produkt ist nicht verfügbar |
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TSM1NB60CH C5G | Hersteller : Taiwan Semiconductor |
MOSFET 600V, 1A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| TSM1NB60CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |