TSM1NB60CW RPG

TSM1NB60CW RPG Taiwan Semiconductor Corporation


pdf.php?pn=TSM1NB60CW Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 7500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.73 EUR
5000+ 0.69 EUR
Mindestbestellmenge: 2500
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Technische Details TSM1NB60CW RPG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 600V 1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V.

Weitere Produktangebote TSM1NB60CW RPG nach Preis ab 0.7 EUR bis 1.93 EUR

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TSM1NB60CW RPG TSM1NB60CW RPG Hersteller : Taiwan Semiconductor Corporation pdf.php?pn=TSM1NB60CW Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 9590 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.92 EUR
16+ 1.66 EUR
100+ 1.15 EUR
500+ 0.96 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 14
TSM1NB60CW RPG TSM1NB60CW RPG Hersteller : Taiwan Semiconductor pdf.php?pn=TSM1NB60CW MOSFET 600V, 1A, Single N-Channel Power MOSFET
auf Bestellung 7835 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
27+1.93 EUR
31+ 1.69 EUR
100+ 1.17 EUR
500+ 0.98 EUR
1000+ 0.83 EUR
2500+ 0.74 EUR
5000+ 0.7 EUR
Mindestbestellmenge: 27
TSM1NB60CW RPG TSM1NB60CW RPG Hersteller : Taiwan Semiconductor 4896490005937573tsm1nb60_d1706.pdf Trans MOSFET N-CH 600V 1A 4-Pin(3+Tab) SOT-223 T/R
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TSM1NB60CW RPG Hersteller : TAIWAN SEMICONDUCTOR pdf.php?pn=TSM1NB60CW Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM1NB60CW RPG Hersteller : TAIWAN SEMICONDUCTOR pdf.php?pn=TSM1NB60CW Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Produkt ist nicht verfügbar