TSM200N03DPQ33 RGG

TSM200N03DPQ33 RGG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Part Status: Active
auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.48 EUR
Mindestbestellmenge: 5000
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Technische Details TSM200N03DPQ33 RGG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 30V 20A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3x3), Part Status: Active.

Weitere Produktangebote TSM200N03DPQ33 RGG nach Preis ab 0.46 EUR bis 1.52 EUR

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TSM200N03DPQ33 RGG TSM200N03DPQ33 RGG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 30V 20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Part Status: Active
auf Bestellung 14639 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.51 EUR
21+ 1.29 EUR
100+ 0.9 EUR
500+ 0.7 EUR
1000+ 0.57 EUR
2000+ 0.51 EUR
Mindestbestellmenge: 18
TSM200N03DPQ33 RGG TSM200N03DPQ33 RGG Hersteller : Taiwan Semiconductor MOSFET 30V, 20A, Dual N-Channel Power MOSFET
auf Bestellung 11520 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.52 EUR
40+ 1.32 EUR
100+ 0.92 EUR
500+ 0.71 EUR
1000+ 0.52 EUR
5000+ 0.49 EUR
10000+ 0.46 EUR
Mindestbestellmenge: 35
TSM200N03DPQ33 RGG TSM200N03DPQ33 RGG Hersteller : Taiwan Semiconductor 139tsm200n03d_b1710.pdf Trans MOSFET N-CH 30V 20A 8-Pin P-DFN EP T/R
Produkt ist nicht verfügbar
TSM200N03DPQ33 RGG TSM200N03DPQ33 RGG Hersteller : Taiwan Semiconductor 139tsm200n03d_b1710.pdf Trans MOSFET N-CH 30V 20A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
TSM200N03DPQ33 RGG TSM200N03DPQ33 RGG Hersteller : Taiwan Semiconductor 139tsm200n03d_b1710.pdf Trans MOSFET N-CH 30V 20A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar