TSM210N02CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 20V 6.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 120000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.28 EUR |
| 30000+ | 0.27 EUR |
| 75000+ | 0.26 EUR |
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Technische Details TSM210N02CX RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 6.7A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.56W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V.
Weitere Produktangebote TSM210N02CX RFG nach Preis ab 0.28 EUR bis 1.2 EUR
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TSM210N02CX RFG | Hersteller : Taiwan Semiconductor |
MOSFET 20V, 6.7A, Single N-Channel Power MOSFET |
auf Bestellung 14108 Stücke: Lieferzeit 14-28 Tag (e) |
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TSM210N02CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 6.7A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
auf Bestellung 124266 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM210N02CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 20V 6.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TSM210N02CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 20V 6.7A 3-Pin SOT-23 T/R |
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TSM210N02CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 20V 6.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TSM210N02CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 21mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM210N02CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 21mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |