TSM2308CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.77 EUR |
| 6000+ | 0.73 EUR |
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Technische Details TSM2308CX RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V.
Weitere Produktangebote TSM2308CX RFG nach Preis ab 0.86 EUR bis 2.03 EUR
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TSM2308CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V |
auf Bestellung 8943 Stücke: Lieferzeit 21-28 Tag (e) |
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| TSM2308CX RFG | Hersteller : TAI-SEM |
Transistor N-Channel MOSFET; 60V; 20V; 192mOhm; 3A; 1,25W; -55°C ~ 150°C; TSM2308CX RFG TSM2308CX TTSM2308cx Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM2308CX RFG | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 60V 3A 3-Pin SOT-23 T/R |
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TSM2308CX RFG | Hersteller : Taiwan Semiconductor |
N Channel Power MOSFET |
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TSM2308CX RFG | Hersteller : Taiwan Semiconductor |
N Channel Power MOSFET |
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TSM2308CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 156mΩ Mounting: SMD Gate charge: 3.99nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM2308CX RFG | Hersteller : Taiwan Semiconductor | MOSFET 60V, 3A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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TSM2308CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 156mΩ Mounting: SMD Gate charge: 3.99nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |