TSM230N06CP ROG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 34A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Description: MOSFET N-CHANNEL 60V 34A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.7 EUR |
5000+ | 0.66 EUR |
12500+ | 0.61 EUR |
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Technische Details TSM230N06CP ROG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 34A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.
Weitere Produktangebote TSM230N06CP ROG nach Preis ab 0.67 EUR bis 1.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TSM230N06CP ROG | Hersteller : Taiwan Semiconductor | MOSFET 60V, 50A, Single N-Channel Power MOSFET |
auf Bestellung 2813 Stücke: Lieferzeit 14-28 Tag (e) |
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TSM230N06CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 34A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
auf Bestellung 26288 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM230N06CP ROG | Hersteller : TSC |
Transistor N-Channel MOSFET; 60V; 20V; 28mOhm; 50A; 53W; -55°C ~ 150°C; TSM230N06CP ROG TSM230N06CP TTSM230n06cp Anzahl je Verpackung: 10 Stücke |
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TSM230N06CP ROG | Hersteller : Taiwan Semiconductor | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TSM230N06CP ROG | Hersteller : Taiwan Semiconductor | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TSM230N06CP ROG | Hersteller : Taiwan Semiconductor | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TSM230N06CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 32A; 53W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Power dissipation: 53W Case: DPAK Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM230N06CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 32A; 53W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Power dissipation: 53W Case: DPAK Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |