TSM2312CX RFG

TSM2312CX RFG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
auf Bestellung 156000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
6000+ 0.53 EUR
9000+ 0.49 EUR
30000+ 0.48 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM2312CX RFG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 20V 4.9A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V.

Weitere Produktangebote TSM2312CX RFG nach Preis ab 0.63 EUR bis 1.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM2312CX RFG TSM2312CX RFG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
auf Bestellung 157339 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 18
TSM2312CX RFG TSM2312CX RFG Hersteller : Taiwan Semiconductor tsm2312_e15.pdf Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
TSM2312CX RFG TSM2312CX RFG Hersteller : Taiwan Semiconductor tsm2312_0312a.pdf Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
TSM2312CX RFG TSM2312CX RFG Hersteller : Taiwan Semiconductor tsm2312_e15.pdf Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
TSM2312CX RFG TSM2312CX RFG Hersteller : TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM2312CX RFG TSM2312CX RFG Hersteller : Taiwan Semiconductor TSM2312_E15-1918861.pdf MOSFET 20V, 4.9A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
TSM2312CX RFG TSM2312CX RFG Hersteller : TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Produkt ist nicht verfügbar