TSM2318CX RFG Taiwan Semiconductor
auf Bestellung 5858 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3437+ | 0.046 EUR |
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Technische Details TSM2318CX RFG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 40V 3.9A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V.
Weitere Produktangebote TSM2318CX RFG nach Preis ab 0.47 EUR bis 1.56 EUR
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TSM2318CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 40V 3.9A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
auf Bestellung 141000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM2318CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 40V 3.9A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
auf Bestellung 145340 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM2318CX RFG | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 40V 3.9A 3-Pin SOT-23 T/R |
auf Bestellung 5858 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM2318CX RFG | Hersteller : TAI-SEM |
N-MOSFET 40V 3.9A 1.25W 45mΩ TSM2318CX Taiwan Semi TTSM2318cx Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM2318CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 3.9A 3-Pin SOT-23 T/R |
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TSM2318CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 3.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TSM2318CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.9A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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TSM2318CX RFG | Hersteller : Taiwan Semiconductor |
MOSFET 40V N channel Mosfet |
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TSM2318CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.9A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |