TSM250NB06DCR RLG

TSM250NB06DCR RLG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 7500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.18 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 2500
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Technische Details TSM250NB06DCR RLG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 60V 7A/30A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 48W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.

Weitere Produktangebote TSM250NB06DCR RLG nach Preis ab 1.13 EUR bis 2.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM250NB06DCR RLG TSM250NB06DCR RLG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12290 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.86 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.54 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 10
TSM250NB06DCR RLG TSM250NB06DCR RLG Hersteller : Taiwan Semiconductor MOSFET 60V, 30A, Dual N-Channel Power MOSFET
auf Bestellung 4842 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.89 EUR
23+ 2.36 EUR
100+ 1.83 EUR
500+ 1.55 EUR
1000+ 1.26 EUR
2500+ 1.19 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 19
TSM250NB06DCR RLG TSM250NB06DCR RLG Hersteller : Taiwan Semiconductor tsm250nb06dcr_a1908.pdf Trans MOSFET N-CH 60V 30A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
TSM250NB06DCR RLG TSM250NB06DCR RLG Hersteller : Taiwan Semiconductor tsm250nb06dcr_a1908.pdf Trans MOSFET N-CH 60V 30A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
TSM250NB06DCR RLG Hersteller : TAIWAN SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM250NB06DCR RLG Hersteller : TAIWAN SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Produkt ist nicht verfügbar