TSM250NB06LDCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.18 EUR |
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Technische Details TSM250NB06LDCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/29A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 48W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.
Weitere Produktangebote TSM250NB06LDCR RLG nach Preis ab 1.13 EUR bis 2.89 EUR
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TSM250NB06LDCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 6A/29A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 4798 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM250NB06LDCR RLG | Hersteller : Taiwan Semiconductor | MOSFET 60V, 29A, Dual N-Channel Power MOSFET |
auf Bestellung 2136 Stücke: Lieferzeit 14-28 Tag (e) |
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TSM250NB06LDCR RLG | Hersteller : Taiwan Semiconductor |
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TSM250NB06LDCR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 60V 29A 8-Pin PDFN EP T/R |
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