TSM2537CQ RFG Taiwan Semiconductor
auf Bestellung 132000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12000+ | 0.25 EUR |
| 24000+ | 0.22 EUR |
| 48000+ | 0.2 EUR |
| 72000+ | 0.18 EUR |
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Technische Details TSM2537CQ RFG Taiwan Semiconductor
Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TDFN (2x2).
Weitere Produktangebote TSM2537CQ RFG nach Preis ab 0.45 EUR bis 1.53 EUR
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor Corporation |
 Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFNPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TDFN (2x2) |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N/P-CH 20V 11.6A/9A 22-Pin TDFN EP T/R |
auf Bestellung 132000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor |
MOSFET 20V, 13A, -20V, -9.5A, Complementary N & P-Channel Power MOSFET |
auf Bestellung 9356 Stücke: Lieferzeit 14-28 Tag (e) |
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TDFN (2x2) |
auf Bestellung 29000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N/P-CH 20V 11.6A/9A 6-Pin TDFN EP T/R |
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N/P-CH 20V 11.6A/9A 6-Pin TDFN EP T/R |
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N/P-CH 20V 11.6A/9A 6-Pin TDFN EP T/R |
Produkt ist nicht verfügbar |
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TSM2537CQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N/P-CH 20V 6.4A/5A 22-Pin TDFN EP T/R |
Produkt ist nicht verfügbar |