TSM280NB06LCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET N-CH 60V 7A/28A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.66 EUR |
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Technische Details TSM280NB06LCR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/28A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.
Weitere Produktangebote TSM280NB06LCR RLG nach Preis ab 0.63 EUR bis 1.74 EUR
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TSM280NB06LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 7A/28A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 6935 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM280NB06LCR RLG | Hersteller : Taiwan Semiconductor |
MOSFET 60V, 28A, Single N-Channel Power MOSFET |
auf Bestellung 9798 Stücke: Lieferzeit 14-28 Tag (e) |
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TSM280NB06LCR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 60V 7A 8-Pin PDFN EP T/R |
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TSM280NB06LCR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 60V 28A 8-Pin PDFN EP T/R |
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| TSM280NB06LCR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| TSM280NB06LCR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |