auf Bestellung 4909 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 717+ | 0.22 EUR |
| 728+ | 0.21 EUR |
| 740+ | 0.2 EUR |
| 752+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.17 EUR |
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Technische Details TSM2N60ECP ROG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 600V 2A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V, Power Dissipation (Max): 52.1W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 25 V.
Weitere Produktangebote TSM2N60ECP ROG nach Preis ab 0.16 EUR bis 0.23 EUR
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TSM2N60ECP ROG | Hersteller : Taiwan Semiconductor |
 N-Channel Power MOSFET |
auf Bestellung 4909 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2N60ECP ROG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TSM2N60ECP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 2A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 52.1W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 25 V |
Produkt ist nicht verfügbar |
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TSM2N60ECP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 2A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 52.1W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 25 V |
Produkt ist nicht verfügbar |
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TSM2N60ECP ROG | Hersteller : Taiwan Semiconductor |
MOSFET 600V, 2A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |