Produkte > TAIWAN SEMICONDUCTOR > TSM2N7000KCT A3G
TSM2N7000KCT A3G

TSM2N7000KCT A3G Taiwan Semiconductor


tsm2n7000k_c15.pdf Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details TSM2N7000KCT A3G Taiwan Semiconductor

Description: MOSFET N-CHANNEL 60V 300MA TO92, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-92, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.

Weitere Produktangebote TSM2N7000KCT A3G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM2N7000KCT A3G TSM2N7000KCT A3G Hersteller : Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 300MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
TSM2N7000KCT A3G TSM2N7000KCT A3G Hersteller : Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 300MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
TSM2N7000KCT A3G TSM2N7000KCT A3G Hersteller : Taiwan Semiconductor MOSFET 60V 0.3A Single N-Ch annel Power MOSFET
Produkt ist nicht verfügbar