TSM2N7002KCX

TSM2N7002KCX Taiwan Semiconductor


tsm2n7002k_i2010.pdf Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R
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Technische Details TSM2N7002KCX Taiwan Semiconductor

Description: 60V, 0.3A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V.

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TSM2N7002KCX TSM2N7002KCX Hersteller : Taiwan Semiconductor Corporation Description: 60V, 0.3A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
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TSM2N7002KCX TSM2N7002KCX Hersteller : Taiwan Semiconductor MOSFET 60V 0.2Amp N channel MOSFET
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