TSM3401CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
auf Bestellung 23350 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.58 EUR |
| 6000+ | 0.55 EUR |
| 9000+ | 0.51 EUR |
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Technische Details TSM3401CX RFG Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V.
Weitere Produktangebote TSM3401CX RFG nach Preis ab 0.46 EUR bis 1.53 EUR
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TSM3401CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V |
auf Bestellung 23903 Stücke: Lieferzeit 21-28 Tag (e) |
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| TSM3401CX RFG | Hersteller : TAI-SEM |
Trans MOSFET P-CH 30V 3A 3-Pin SOT-23 T/R TSM3401CX RFG TTSM3401cx Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM3401CX RFG | Hersteller : Taiwan Semiconductor |
 Trans MOSFET P-CH 30V 3A 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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TSM3401CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 9.52nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM3401CX RFG | Hersteller : Taiwan Semiconductor |
MOSFET -30V, -3A, Single P-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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TSM3401CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 9.52nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |