TSM3443CX6 RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.37 EUR |
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Technische Details TSM3443CX6 RFG Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V.
Weitere Produktangebote TSM3443CX6 RFG nach Preis ab 0.42 EUR bis 2.37 EUR
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TSM3443CX6 RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
auf Bestellung 9989 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM3443CX6 RFG | Hersteller : Taiwan Semiconductor |
MOSFET -20V, -4.7A, Single P-Channel Power MOSFET |
auf Bestellung 5176 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 2172 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM3443CX6 RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 4.7A 6-Pin SOT-26 T/R |
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TSM3443CX6 RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 4.7A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |
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TSM3443CX6 RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 4.7A 6-Pin SOT-26 T/R |
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TSM3443CX6 RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 1.3W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.7A Power dissipation: 1.3W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM3443CX6 RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 1.3W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.7A Power dissipation: 1.3W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |