TSM4435BCS RLG Taiwan Semiconductor

Description: MOSFET P-CHANNEL 30V 9.1A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V.