TSM4800N15CX6 RFG

TSM4800N15CX6 RFG Taiwan Semiconductor Corporation


pdf.php?pn=TSM4800N15CX6 Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.45 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM4800N15CX6 RFG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 150V 1.4A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V, Power Dissipation (Max): 2.1W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V.

Weitere Produktangebote TSM4800N15CX6 RFG nach Preis ab 0.5 EUR bis 2.73 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM4800N15CX6 RFG TSM4800N15CX6 RFG Hersteller : Taiwan Semiconductor Corporation pdf.php?pn=TSM4800N15CX6 Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
auf Bestellung 5759 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.33 EUR
23+ 1.13 EUR
100+ 0.79 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
TSM4800N15CX6 RFG TSM4800N15CX6 RFG Hersteller : Taiwan Semiconductor pdf.php?pn=TSM4800N15CX6 MOSFET 150V, 1.4A, Single N-Channel Power MOSFET
auf Bestellung 3142 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.73 EUR
24+ 2.23 EUR
100+ 1.73 EUR
500+ 1.47 EUR
1000+ 1.2 EUR
3000+ 1.12 EUR
6000+ 1.07 EUR
Mindestbestellmenge: 20