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TSM4N60ECH C5G

TSM4N60ECH C5G Taiwan Semiconductor


tsm4n60e_b1901.pdf Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251 Tube
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Technische Details TSM4N60ECH C5G Taiwan Semiconductor

Description: MOSFET N-CHANNEL 600V 4A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V, Power Dissipation (Max): 86.2W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V.

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TSM4N60ECH C5G TSM4N60ECH C5G Hersteller : Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
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TSM4N60ECH C5G TSM4N60ECH C5G Hersteller : Taiwan Semiconductor TSM4N60E_A14-1118180.pdf MOSFET 600V, 4A, Single N-Channel Power MOSFET
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