TSM4NC60CI C0G

TSM4NC60CI C0G

TSM4NC60CI C0G

Hersteller: Taiwan Semiconductor
MOSFET 600V, 4Amp, 2,5ohm N channel Mosfet
TSM4NC60CI_A1606-1121968.pdf
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Technische Details TSM4NC60CI C0G

Description: MOSFET N-CH 600V 4A ITO220AB, Manufacturer: Taiwan Semiconductor Corporation, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.3A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 50V, Power Dissipation (Max): 40W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: ITO-220AB, Package / Case: TO-220-3 Full Pack, Isolated Tab.

Preis TSM4NC60CI C0G ab 0 EUR bis 0 EUR

TSM4NC60CI C0G
TSM4NC60CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A ITO220AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 50V
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
TSM4NC60CI_A1606.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen