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TSM60N380CZ C0G

TSM60N380CZ C0G Taiwan Semiconductor Corporation

TSM60N380CZ_A1607.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.56 EUR
10+ 4.62 EUR
100+ 3.67 EUR
500+ 3.11 EUR
1000+ 2.64 EUR
2000+ 2.51 EUR
Mindestbestellmenge: 5
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Technische Details TSM60N380CZ C0G Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 600V 11A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V.

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TSM60N380CZ C0G Hersteller : Taiwan Semiconductor TSM60N380CZ_A1607-1121934.pdf MOSFET 60V 11Amp 0,38 N channel Mosfet
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