Technische Details TSM60N900CP ROG Taiwan Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 4.5A, Power dissipation: 50W, Case: DPAK, Gate-source voltage: ±30V, On-state resistance: 0.9Ω, Mounting: SMD, Gate charge: 9.7nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TSM60N900CP ROG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TSM60N900CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM60N900CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 4.5A TO252 |
Produkt ist nicht verfügbar |
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TSM60N900CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 4.5A TO252 |
Produkt ist nicht verfügbar |
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| TSM60N900CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |