Produkte > TAIWAN SEMICONDUCTOR > TSM60NB099CF C0G
TSM60NB099CF C0G

TSM60NB099CF C0G Taiwan Semiconductor


2224619879828047tsm60nb099cf_a1705.pdf Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) ITO-220S Tube
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details TSM60NB099CF C0G Taiwan Semiconductor

Description: MOSFET N-CH 600V 38A ITO220S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 5.3A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220S, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V.

Weitere Produktangebote TSM60NB099CF C0G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM60NB099CF C0G TSM60NB099CF C0G Hersteller : TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TSM60NB099CF C0G TSM60NB099CF C0G Hersteller : Taiwan Semiconductor Corporation Description: MOSFET N-CH 600V 38A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.3A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Produkt ist nicht verfügbar
TSM60NB099CF C0G TSM60NB099CF C0G Hersteller : Taiwan Semiconductor TSM60NB099CF_A1705-1143347.pdf MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 38A
Produkt ist nicht verfügbar
TSM60NB099CF C0G TSM60NB099CF C0G Hersteller : TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Produkt ist nicht verfügbar