TSM60NB190CF C0G

TSM60NB190CF C0G Taiwan Semiconductor Corporation


pdf.php?pn=TSM60NB190CF Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
auf Bestellung 3524 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.67 EUR
10+ 8.11 EUR
100+ 6.56 EUR
500+ 5.83 EUR
1000+ 5 EUR
2000+ 4.7 EUR
Mindestbestellmenge: 3
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Technische Details TSM60NB190CF C0G Taiwan Semiconductor Corporation

Description: MOSFET N-CH 600V 18A ITO220S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V, Power Dissipation (Max): 59.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220S, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V.

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TSM60NB190CF C0G TSM60NB190CF C0G Hersteller : Taiwan Semiconductor TSM60NB190CF_B1901-1918831.pdf MOSFET 600V 18A Single N-Ch annel Power MOSFET
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