TSM60NB190CZ C0G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
auf Bestellung 3868 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.58 EUR |
| 10+ | 5.46 EUR |
| 100+ | 4.35 EUR |
| 500+ | 3.68 EUR |
| 1000+ | 3.12 EUR |
| 2000+ | 2.96 EUR |
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Technische Details TSM60NB190CZ C0G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 18A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V, Power Dissipation (Max): 33.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V.
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TSM60NB190CZ C0G | Hersteller : Taiwan Semiconductor |
MOSFET 600V 18A Single N-Ch annel Power MOSFET |
auf Bestellung 3755 Stücke: Lieferzeit 14-28 Tag (e) |
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| TSM60NB190CZ C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.8A Power dissipation: 150.6W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| TSM60NB190CZ C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.8A Power dissipation: 150.6W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |