TSM60NB380CF C0G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Power dissipation: 62.5W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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Technische Details TSM60NB380CF C0G TAIWAN SEMICONDUCTOR
Description: MOSFET N-CH 600V 11A ITO220S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220S, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V.
Weitere Produktangebote TSM60NB380CF C0G
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TSM60NB380CF C0G | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 11A ITO220S Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V |
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TSM60NB380CF C0G | Hersteller : Taiwan Semiconductor |
MOSFET 600V, 11A, Single N-Channel Power MOSFET |
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TSM60NB380CF C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP Power dissipation: 62.5W Gate charge: 21nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO220FP On-state resistance: 0.38Ω Mounting: THT |
Produkt ist nicht verfügbar |