TSM60NB380CH C5G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: IPAK
On-state resistance: 0.38Ω
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: IPAK
On-state resistance: 0.38Ω
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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Technische Details TSM60NB380CH C5G TAIWAN SEMICONDUCTOR
Description: MOSFET N-CH 600V 9.5A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V.
Weitere Produktangebote TSM60NB380CH C5G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TSM60NB380CH C5G | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 9.5A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V |
Produkt ist nicht verfügbar |
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TSM60NB380CH C5G | Hersteller : Taiwan Semiconductor | MOSFET 600V, 9.5A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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TSM60NB380CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK Power dissipation: 83W Gate charge: 19.4nC Polarisation: unipolar Drain current: 6A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: IPAK On-state resistance: 0.38Ω Mounting: THT |
Produkt ist nicht verfügbar |