TSM60NC390CI C0G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
auf Bestellung 3955 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6.42 EUR |
| 10+ | 5.34 EUR |
| 100+ | 4.25 EUR |
| 500+ | 3.6 EUR |
| 1000+ | 3.05 EUR |
| 2000+ | 2.9 EUR |
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Technische Details TSM60NC390CI C0G Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ITO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V.
Weitere Produktangebote TSM60NC390CI C0G nach Preis ab 2.76 EUR bis 7.12 EUR
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TSM60NC390CI C0G | Hersteller : Taiwan Semiconductor |
MOSFET 600V, 11A, Single N-Channel Power MOSFET |
auf Bestellung 4000 Stücke: Lieferzeit 14-28 Tag (e) |
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