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TSM6502CR RLG

TSM6502CR RLG Taiwan Semiconductor Corporation

pdf.php?pn=TSM6502CR (N) Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 2500
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Technische Details TSM6502CR RLG Taiwan Semiconductor Corporation

Description: MOSFET N/P-CH 60V 24A/18A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6).

Weitere Produktangebote TSM6502CR RLG nach Preis ab 0.95 EUR bis 2.42 EUR

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Preis ohne MwSt
TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor Corporation pdf.php?pn=TSM6502CR (N) Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
auf Bestellung 5125 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.39 EUR
14+ 1.97 EUR
100+ 1.53 EUR
500+ 1.3 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 11
TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor pdf.php?pn=TSM6502CR (N) MOSFET 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
auf Bestellung 8257 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.42 EUR
27+ 1.99 EUR
100+ 1.54 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
2500+ 1 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 22
TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor 11173220635012840tsm6502cr_a1701.pdf Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R
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