TSM680P06CI C0G Taiwan Semiconductor Corporation


TSM680P06Cx_C0G,C5G,R0G.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 60V 18A ITO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 17W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: ITO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
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Technische Details TSM680P06CI C0G Taiwan Semiconductor Corporation

Description: MOSFET P-CH 60V 18A ITO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V, Power Dissipation (Max): 17W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: ITO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V.

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TSM680P06CI C0G TSM680P06CI C0G Hersteller : Taiwan Semiconductor TSM680P06_F15-1121953.pdf MOSFET 60V 18Amp P channel Power Mosfet
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