TSM680P06DPQ56 RLG
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Technische Details TSM680P06DPQ56 RLG
Description: MOSFET 2 P-CH 60V 12A 8PDFN, Power - Max: 3.5W, Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drain to Source Voltage (Vdss): 60V, FET Type: 2 P-Channel (Dual), Part Status: Active, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V, Supplier Device Package: 8-PDFN (5x6), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).
Preis TSM680P06DPQ56 RLG ab 0 EUR bis 0 EUR
.JPG "TSM680P06DPQ56 RLG") Hersteller: Taiwan Semiconductor Corporation Description: MOSFET 2 P-CH 60V 12A 8PDFN Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.5W Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) 
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auf Bestellung 6027 Stücke  Lieferzeit 21-28 Tag (e) |
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Hersteller: Taiwan Semiconductor Corporation Description: MOSFET 2 P-CH 60V 12A 8PDFN Power - Max: 3.5W Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ)
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auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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