TSM70N1R4CH C5G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details TSM70N1R4CH C5G TAIWAN SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 2A, Power dissipation: 38W, Case: IPAK, Gate-source voltage: ±30V, On-state resistance: 1.4Ω, Mounting: THT, Gate charge: 7.7nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TSM70N1R4CH C5G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TSM70N1R4CH C5G | Hersteller : Taiwan Semiconductor Corporation | Description: MOSFET N-CH 700V 3.3A TO251 |
Produkt ist nicht verfügbar |
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TSM70N1R4CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 7.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |