TSM70N900CI C0G Taiwan Semiconductor
auf Bestellung 1995 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 5.98 EUR |
| 11+ | 4.97 EUR |
| 100+ | 3.95 EUR |
| 250+ | 3.64 EUR |
| 500+ | 3.3 EUR |
| 1000+ | 2.83 EUR |
| 2000+ | 2.68 EUR |
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Technische Details TSM70N900CI C0G Taiwan Semiconductor
Description: MOSFET N-CH 700V 4.5A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V.
Weitere Produktangebote TSM70N900CI C0G nach Preis ab 7.05 EUR bis 11.26 EUR
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TSM70N900CI C0G | Hersteller : Taiwan Semiconductor Corporation |
 Description: MOSFET N-CH 700V 4.5A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V |
auf Bestellung 920 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM70N900CI C0G | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) ITO-220 Tube |
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TSM70N900CI C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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TSM70N900CI C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |