TSM70N900CP ROG Taiwan Semiconductor
auf Bestellung 27 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 5.15 EUR |
| 13+ | 4.29 EUR |
| 100+ | 3.41 EUR |
| 250+ | 3.15 EUR |
| 500+ | 2.86 EUR |
| 1000+ | 2.44 EUR |
| 2500+ | 2.32 EUR |
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Technische Details TSM70N900CP ROG Taiwan Semiconductor
Description: MOSFET N-CH 700V 4.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V.
Weitere Produktangebote TSM70N900CP ROG nach Preis ab 4.88 EUR bis 9.23 EUR
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TSM70N900CP ROG | Hersteller : Taiwan Semiconductor Corporation |
 Description: MOSFET N-CH 700V 4.5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V |
auf Bestellung 2458 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM70N900CP ROG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 700V 4.5A 3-Pin(2+Tab) DPAK T/R |
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| TSM70N900CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK Drain-source voltage: 700V Drain current: 2.7A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: DPAK Anzahl je Verpackung: 1 Stücke |
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TSM70N900CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 700V 4.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V |
Produkt ist nicht verfügbar |
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| TSM70N900CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK Drain-source voltage: 700V Drain current: 2.7A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: DPAK |
Produkt ist nicht verfügbar |